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State‐of‐the‐art perovskite solar cells (PSCs) have bandgaps that are invariably larger than 1.45 eV, which limits their theoretically attainable power conversion efficiency. The emergent mixed‐(Pb, Sn) perovskites with bandgaps of 1.2–1.3 eV are ideal for single‐junction solar cells according to the Shockley–Queisser limit, and they have the potential to deliver higher efficiency. Nevertheless, the high chemical activity of Sn(II) in these perovskites makes it extremely challenging to control their physical properties and chemical stability, thereby leading to PSCs with relatively low PCE and stability. In this work, the authors employ the Lewis‐adduct SnF₂·3FACl additive in the solution‐processing of ideal‐bandgap halide perovskites (IBHPs), and prepare uniform large‐grain perovskite thin films containing continuously functionalized grain boundaries with the stable SnF₂phase. Such Sn(II)‐rich grain‐boundary networks significantly enhance the physical properties and chemical stability of the IBHP thin films. Based on this approach, PSCs with an ideal bandgap of 1.3 eV are fabricated with a promising efficiency of 15.8%, as well as enhanced stability. The concept of Lewis‐adduct‐mediated grain‐boundary functionalization in IBHPs presented here points to a new chemical route for approaching the Shockley–Queisser limit in future stable PSCs.

The alloying behavior between FAPbI₃and CsSnI₃perovskites is studied carefully for the first time, which has led to the realization of single‐phase hybrid perovskites of (FAPbI₃)_1−x(CsSnI₃)_x(0<x<1) compositions with anomalous bandgaps. (FAPbI₃)_1−x(CsSnI₃)_xperovskites exhibit stable, homogenous composition/microstructure at the nanoscale, as confirmed by microscopic characterization. The ideal bandgap of 1.3 eV for single‐junction solar cell operation is achieved in the rationally‐tailored (FAPbI₃)_0.7(CsSnI₃)_0.3‐composition perovskite. Solar cells based on this new perovskite show power conversion efficiency up to 14.6 %.